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QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 1 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com product features ? frequency: 30 to 1 2 00 m hz ? output power (p 3db ): 40 w 1 ? linear gain: 2 0 .8 db 1 ? typical pae 3db : 73.2 % 1 ? operating voltage: 5 0 v ? low thermal resistance package ? cw and pulse capable ? 6 x 5 mm package note 1: @ 1. 0 ghz (loadpull) 8 pin d fn ( 6 x? 5 ?x? 0. 85 ? mm ) general description the QPD1004 is a 25w (p3db), 50 - input matched discrete gan on sic hemt which operates from 30mhz to 1200mhz on a 50v supply rail. the integrated input matching network enables wideband gain and power performance, while the output can be matched on board t o optimize power and efficiency for any region within the band. it is ideally suited for basestation, radar and communications applications and can support both cw and pulsed mode of operations. the device is housed in an industry - standard 6 x 5 mm surface mount d fn package. lead - free and rohs compliant evaluation boards are available upon request. functional block diagram applications ? military radar ? land mobile and military radio communications ? test instrumen t ation ? wideband or narrowband amplifiers ? jammers ordering info part no. eccn description QPD1004s2 ear99 2 piece sample bag QPD1004s q ear99 25 piece sample bag QPD1004sr ear99 100 piece 7 reel QPD1004evb1 ear99 30 C 1000 mhz evb
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 2 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com absolute maximum ratings 2 parameter rating unit s breakdown voltage, b v d g 145 v gate voltage range, v g - 8 to +2 v drain current, i d 3.6 a gate current range, i g 1 7 .2 ma power dissipation, cw , p diss 27. 6 w rf input power at 1 ghz , cw, 50?, t = 25 ? c + 29.7 dbm channel temperature, t ch 275 c mounting temperature (30? seconds) 32 0 ? c storage temperature ? 65 to +150 c notes: 1. at channel temperature of 200c. 2. operation of this device outside the parameter ranges given above may cause permanent damage. recommended operating conditions 1 parameter min typ max units operating temp. range ?40 +25 +85 ?c drain voltage range, v d C + 50 + 55 v drain bias current, i dq C 5 0 C ma drain current, i d C 700 C m a gate voltage, v g 3 C ?2.8 C v channel temperature (t ch ) C C 250 c power dissipation, cw (p d ) 2 C C 25.0 w notes: 1. electrical performance is measured under conditions noted in the electrical specifications table. specifications are not guaranteed over all recommended operating conditions. 2. back plane of package at 85 c 3. to be adjusted to desired i dq
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 3 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com pulsed characterization C load pull performance C efficiency tuned parameters typical values unit frequency 600 800 1000 1200 m hz linear gain, g lin 22.6 22.0 20.8 18.8 db output power at 3db compression point, p 3db 43.5 44.8 44.9 45.0 dbm power - added - efficiency at 3db compression point, pae 3db 73.7 68.6 73.2 65.0 % gain at 3db compression point, g 3db 19.6 19.0 17.8 15.8 db notes: 1 - test conditions unless otherwise noted: v d = + 5 0 ? v, i dq = 5 0?ma, temp = +25?c pulsed characterization C load pull performance C power tuned parameters typical values unit frequency, f 600 800 1000 1200 m hz linear gain, g lin 21.0 21.2 20.1 18.4 db output power at 3db compression point, p 3db 45.7 45.9 46.0 45.7 dbm power - added - efficiency at 3db compression point, pae 3db 62.4 61.5 63.5 59.5 % gain at 3db compression point 18.0 18.2 17.1 15.4 db notes: 1. test conditions unless otherwise noted: v d = + 5 0 ? v, i d q = 5 0 ? ma, temp = +25?c rf characterization C 30 C 1 000 m hz evb performance at 5 00 m hz 1 parameter min typ max units linear gain, g lin C 2 1.0 C ? db output power at 3db compression point, p 3db C 4 4.1 C dbm drain efficien cy at 3db compression point, deff 3db C 6 5.1 C % gain at 3db compression point, g 3db C 18 .0 C db notes: 1. v d = + 5 0 ? v, i d q = 5 0 ? ma, temp = +25?c, cw signal rf characteriz ati on C mismatch ruggedness at 1 000 m hz symbol parameter db compression typical vswr impedance mismatch ruggedness 3 ? 10:1 notes: 1 - test conditions unless otherwise noted: t a = 25 c, v d = 5 0 v, i dq = 5 0 ma 2 - driving input power is determined at cw c ompression under matched condition at evb output connector .
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 4 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com median lifetime 1 note: 1 - for pulsed signals, average lifetime is average lifetime at maximum channel temperature divided by duty cycle.
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 5 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com thermal and reliability information - cw parameter conditions values units thermal resistance ( jc ) 85 c case 9.6 w pdiss, cw 5.4 c/w maximum channel temperature (t ch ) 1 37 c median lifetime (t m ) 2 .0 e 10 hrs thermal resistance ( jc ) 85 c case 14.4 w pdiss, cw 5.8 c/w maximum channel temperature (t ch ) 1 68 c median lifetime (t m ) 7 . 0 e 8 hrs thermal resistance ( jc ) 85 c case 19.2 w pdiss, cw 6.1 c/w maximum channel temperature (t ch ) 2 0 2 c median lifetime (t m ) 3 .0 e 7 hrs thermal resistance ( jc ) 85 c case 24.0 w pdiss, cw 6.5 c/w maximum channel temperature (t ch ) 2 41 c median lifetime (t m ) 1.6 e 6 hrs
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 6 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com load pull smith charts 1 , 2 notes: 1. vd = 5 0 v, i dq = 5 0 ma , pulsed signal with 1 00 u s pulse width and 1 0 % duty cycle . 2. see page 1 5 for load pull and source pull reference planes. 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 4 0.6 ghz, load-pull 45.6 45.4 45.2 45 44.8 19.4 18.9 18.4 17.9 17.4 73.3 71.3 69.3 67.3 65.3 63.3 61.3 ? max power is 45.7dbm at z = 25.196+7.756i ? ? = -0.1189+0.1483i ? max gain is 19.6db at z = 33.945+36.625i ? ? = 0.2362+0.416i ? max pae is 73.7% at z = 33.945+36.625i ? ? = 0.2362+0.416i zo = 33.3 ? 3db compression referenced to peak gain zs(1fo) = 50.77-18.23i ? zs(2fo) = 97.01+11.6i ? zl(2fo) = 23.23-10.13i ? power gain pae
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 7 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com load pull smith charts 1 , 2 notes: 1. vd = 5 0 v, i dq = 5 0 ma, pulsed signal with 100 us pulse width and 1 0 % duty cycle . 2. see page 1 5 for load pull and source pull reference planes. 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 4 0.8 ghz, load-pull 45.8 45.6 45.4 45 44.8 19.5 19 18.5 18 17.5 67.3 65.3 63.3 61.3 59.3 57.3 ? max power is 45.9dbm at z = 25.28+7.723i ? ? = -0.1175+0.1473i ? max gain is 19.7db at z = 18.533+38.6i ? ? = 0.1735+0.6155i ? max pae is 68.6% at z = 35.713+22.969i ? ? = 0.1312+0.2892i zo = 33.3 ? 3db compression referenced to peak gain zs(1fo) = 52.3-10.19i ? zs(2fo) = 15.47-17.6i ? zl(2fo) = 21.36-12.1i ? power gain pae
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 8 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com load pull smith charts 1 , 2 notes: 1. vd = 5 0 v, i dq = 5 0 ma, pulsed signal with 100 us pulse width and 1 0 % duty cycle . 2. see page 1 5 for load pull and source pull reference planes. 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 1 ghz, load-pull 45.8 45.6 45.4 45.2 45 17.6 17.1 16.6 16.1 15.6 71.3 69.3 67.3 65.3 63.3 61.3 ? max power is 46dbm at z = 20.887+9.67i ? ? = -0.1911+0.2126i ? max gain is 18db at z = 19.02+28.458i ? ? = 0.0177+0.5343i ? max pae is 73.2% at z = 28.668+23.308i ? ? = 0.0584+0.3541i zo = 33.3 ? 3db compression referenced to peak gain zs(1fo) = 41.9-11.87i ? zs(2fo) = 21.55-32.61i ? power gain pae
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 9 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com load pull smith charts 1 , 2 notes: 1. vd = 5 0 v, i dq = 5 0 ma, pulsed signal with 100 us pulse width and 1 0 % duty cycle . 2. see page 1 5 for load pull and source pull reference planes. 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 1.2 ghz, load-pull 45.5 45.3 45.1 44.9 44.7 44.5 15.5 15 14.5 14 13.5 63.1 61.1 59.1 57.1 55.1 53.1 53.1 ? max power is 45.7dbm at z = 20.924+9.631i ? ? = -0.1907+0.2115i ? max gain is 15.9db at z = 15.155+22.025i ? ? = -0.1391+0.5178i ? max pae is 65% at z = 21.259+17.412i ? ? = -0.1079+0.3536i zo = 33.3 ? 3db compression referenced to peak gain zs(1fo) = 52.25-23.28i ? zs(2fo) = 7.39-13.13i ? zl(2fo) = 17.13-24.3i ? power gain pae
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 10 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com typical performance C load pull drive - up notes: 1. pulsed signal with 1 00 u s pulse width and 1 0 % duty cycle, vd = 5 0 v, i dq = 5 0 ma 2. see page 1 5 for load pull and source pull reference planes where the performance was measured. 30 32 34 36 38 40 42 44 46 48 16 17 18 19 20 21 22 23 24 25 26 output power [dbm] gain [db] gain and pae vs. output power 0.6 ghz - power tuned zs(1fo) = 50.77-18.23i ? ? ? ? 30 32 34 36 38 40 42 44 46 48 0 10 20 30 40 50 60 70 80 90 100 pae [%] gain pae 30 32 34 36 38 40 42 44 46 18 19 20 21 22 23 24 25 26 27 28 output power [dbm] gain [db] gain and pae vs. output power 0.6 ghz - efficiency tuned zs(1fo) = 50.77-18.23i ? ? ? ? 30 32 34 36 38 40 42 44 46 0 10 20 30 40 50 60 70 80 90 100 pae [%] gain pae 30 32 34 36 38 40 42 44 46 48 16 17 18 19 20 21 22 23 24 25 26 output power [dbm] gain [db] gain and pae vs. output power 0.8 ghz - power tuned zs(1fo) = 52.3-10.19i ? ? ? ? 30 32 34 36 38 40 42 44 46 48 0 10 20 30 40 50 60 70 80 90 100 pae [%] gain pae 30 32 34 36 38 40 42 44 46 16 17 18 19 20 21 22 23 24 25 26 output power [dbm] gain [db] gain and pae vs. output power 0.8 ghz - efficiency tuned zs(1fo) = 52.3-10.19i ? ? ? ? 30 32 34 36 38 40 42 44 46 0 10 20 30 40 50 60 70 80 90 100 pae [%] gain pae 30 32 34 36 38 40 42 44 46 48 16 17 18 19 20 21 22 23 24 25 26 output power [dbm] gain [db] gain and pae vs. output power 1 ghz - power tuned zs(1fo) = 41.9-11.87i ? ? ? ? 30 32 34 36 38 40 42 44 46 48 0 10 20 30 40 50 60 70 80 90 100 pae [%] gain pae 30 32 34 36 38 40 42 44 46 16 17 18 19 20 21 22 23 24 25 26 output power [dbm] gain [db] gain and pae vs. output power 1 ghz - efficiency tuned zs(1fo) = 41.9-11.87i ? ? ? ? 30 32 34 36 38 40 42 44 46 0 10 20 30 40 50 60 70 80 90 100 pae [%] gain pae
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 11 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com typical performance C load pull drive - up notes: 1. pulsed signal with 1 00 u s pulse width and 1 0 % duty cycle, vd = 5 0 v, i dq = 50 ma 2. see page 1 5 for load pull and source pull reference planes where the performance was measured. 30 32 34 36 38 40 42 44 46 48 14 15 16 17 18 19 20 21 22 23 24 output power [dbm] gain [db] gain and pae vs. output power 1.2 ghz - power tuned zs(1fo) = 52.25-23.28i ? ? ? ? 30 32 34 36 38 40 42 44 46 48 0 10 20 30 40 50 60 70 80 90 100 pae [%] gain pae 30 32 34 36 38 40 42 44 46 14 15 16 17 18 19 20 21 22 23 24 output power [dbm] gain [db] gain and pae vs. output power 1.2 ghz - efficiency tuned zs(1fo) = 52.25-23.28i ? ? ? ? 30 32 34 36 38 40 42 44 46 0 10 20 30 40 50 60 70 80 90 100 pae [%] gain pae
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 12 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com power driveup performance over temperatures of 30 C 1 000 m hz evb 1 notes: 1 - vd = 5 0 v, i dq = 5 0 ma, cw signal
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 13 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com power driveup performance at 25 c of 30 C 1 000 m hz evb 1 notes: 1 - vd = 5 0 v, i dq = 5 0 ma, cw signal
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 14 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com two - tone performance a t 25 c o f 30 C 1 000 m hz evb 1 notes: 1 - center frequency = 4 5 0 m hz. tone seperation = 1 mhz.
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 15 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com p in layout 1 notes: 1. the qpd10 04 will be marked with the qpd 10 04 designator and a lot code marked below the part designator. the yy represents the last two digits of the calendar year the part was manufactured, the ww is the work week of the assembly lot start, the m xxx is the batch id . pin description pin symbol description 1 vg gate voltage 2, 3 rf in rf input (do not put dc) 4, 5, 8 nc not connected 6, 7 rf out / vd rf output / drain voltage 9 gnd source to be connected to ground
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 16 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com bias - up procedure bias - down procedure 1. set v g to - 4 v. 1. turn off rf signal. 2. set id current limit to 10 0 ma. 2. turn off vd 3. apply 50 v vd. 3. wait 2 seconds to allow drain capacitor to discharge 4. slowly adjust vg until id is set to 50 ma. 4. turn off vg 5. set id current limit to 1.5 a 6. apply rf. mechanical drawing notes: 1 - all dimensions are in mm, otherwise noted. tolerance is 0.050 mm. bias - up procedure bias - down procedure 2. set v g to - 4 v. 3. turn off rf signal. 4. set id current limit to 1 0 0 ma. 4. turn off vd 5. apply 5 0 v vd. 5. wait 2 seconds to allow drain capacitor to discharge 6. slowly adjust vg until id is set to 5 0 ma. 7. turn off vg 8. set id current limit to 1.5 a 9. apply rf.
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 17 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com pcb layout C 30 C 1 000 m hz evb 1 notes: 1 - pcb material is ro4 3 50b , 20 m il thick substrate, 0.5 oz. copper each side.
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 18 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com bill of material C 30 C 1 000 m hz evb ref des value description manufacturer part number c1, c 6 24 00 pf x7r 5 0v 1 5% 0 805 capacitor dli c08bl242x - 5un - x0t c2 1 0 nf x7r 16 v 10 % 0603 capacitor avx 0603yc103kat2a c3 10 u f x7r 1 0v 10% 0805 capacitor murata grm21br71a106ke51l c4 2. 0 pf c0g 250vdc 0. 05 pf capacitor atc 600s 2 r 0a t250 x c 7 4.7 u f x7r 100 v 10% 2220 capacitor murata grm55er72a475ka01l l1 0. 5 3 uh conical 5 % 1060 ma inductor coilcraft bcr - 531jl b l2 15 nh 0603 5% 1.9 a inductor coilcraft 0603hc - 15nxjlw l4 1000 nh 0603 2% 400 ma inductor coilcraft 0603ls - 102xglc l5 12 nh 0603 5% 1. 1 a inductor coilcraft 0603h p - 1 2 nx g lw j1 C j 2 C sma panel mount 4 - hole jack gigalane psf - s00 - 000 r1 10 ohm 0603 1% thick film resistor tti inc crcw060310r0jnea
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 19 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com recommended solder temperature profile
QPD1004 25w, 50v, 30 C 1 200 mhz, gan rf input - matched transistor rev . c - 20 of 20 - disclaimer: subject to change without notice ? 20 17 qorvo www.qorvo.com product compliance information esd sensitivity ratings solderability caution! esd sensitive device compatible with lead free solder ing processes , 260 ? c maximum reflow temperature. package lead plating: niau the use of no - clean solder to avoid washing after soldering is recommended. this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free esd rating esd rating : class 1a value: 300 v test: human body model (hbm) standard: jedec standard j s - 001 msl rating msl rating: tbd test: 260 ? c convection reflow standard: jedec standard ipc/jedec j - std - 020 contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about qorvo : web: www. qorvo .com tel: +1.972.994.8465 email: info - sales@qorvo.com fax: +1.972.994.8504 for technical questions and application information: email: info - products@qorvo.com important notice the information contained herein is believed to be reliable. qorvo makes no warranties regarding the information contained herein. qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. qorvo assumes no resp onsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the use r. all in formation contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for qorvo products. the information contained herein or any use of such information does not grant, e xplicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. qorvo products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death .

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